Molecular Transistors and Organic Memory Devices
(5/3/2011) 71 minutes
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Field-effect transistors (FETs) rely on the gated electrostatic modulation of the channel charge by changing the relative position of the conduction and valance bands with respect to the electrodes. In molecular-scale devices, a longstanding challenge has been the ability to create a true three-terminal device that operates in this manner. In this talk, I will demonstrate a direct electrostatic modulation of orbitals in a molecular transistor configuration, with both effective gate control and enhanced resonant coupling of the orbitals to the source and drain electrodes.


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